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Toshiba RN1105(TE85L,F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • TWD3.20
    Each (In a Pack of 5)
Toshiba RN1105(TE85L,F) NPN Digital Transistor, 100 mA, 50 V, 3-Pin ESM
  • Transistor TypeNPN
  • Maximum DC Collector Current100 mA
  • Maximum Collector Emitter Voltage50 V
  • Package TypeESM
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • TWD100.00Each
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN, Through Hole
  • TWD137.00Each
Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN, Through Hole
  • Maximum Continuous Collector Current60 A
  • Maximum Collector Emitter Voltage1100 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation333 W
  • Package TypeTO-3PN
See similar products in IGBTs
Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS Toshiba TK090A65Z,S4X(S
  • TWD117.60
    Each (In a Tube of 50)
Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS Toshiba TK090A65Z,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current30 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO-220SIS
  • SeriesTK090A65Z
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Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 Toshiba TK099V65Z,LQ(S
  • TWD135.00
    Each (In a Pack of 2)
  • Also available in industry standard packaging
Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 Toshiba TK099V65Z,LQ(S
  • Channel TypeN
  • Maximum Continuous Drain Current30 A
  • Maximum Drain Source Voltage650 V
  • Package TypeDFN8x8
  • SeriesTK099V65Z
See similar products in MOSFETs
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M
  • TWD201.00Each
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M
  • Channel TypeN
  • Maximum Continuous Drain Current39 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-220SIS
  • SeriesTK
See similar products in MOSFETs
Toshiba 20V 1A, Schottky Diode, 2-Pin S-FLAT CRS06(T5L,TEMQ)
  • TWD9.10
    Each (In a Pack of 10)
Toshiba 20V 1A, Schottky Diode, 2-Pin S-FLAT CRS06(T5L,TEMQ)
  • Mounting TypeSurface Mount
  • Package TypeS-FLAT
  • Maximum Continuous Forward Current1A
  • Peak Reverse Repetitive Voltage20V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
Toshiba 600V 2A, Rectifier Diode, 2-Pin M-FLAT CMG03(T2L,TEMQ)
  • TWD9.50
    Each (In a Pack of 10)
Toshiba 600V 2A, Rectifier Diode, 2-Pin M-FLAT CMG03(T2L,TEMQ)
  • Mounting TypeSurface Mount
  • Package TypeM-FLAT
  • Maximum Continuous Forward Current2A
  • Peak Reverse Repetitive Voltage600V
  • Diode ConfigurationStud Cathode
See similar products in Schottky Diodes & Rectifiers
Silicon P-Channel MOSFET, 3.5 A, 60 V, 3-Pin SOT-23 Toshiba SSM3J351R,LF(T
  • TWD4.70
    Each (On a Reel of 3000)
Silicon P-Channel MOSFET, 3.5 A, 60 V, 3-Pin SOT-23 Toshiba SSM3J351R,LF(T
  • Channel TypeP
  • Maximum Continuous Drain Current3.5 A
  • Maximum Drain Source Voltage60 V
  • Package TypeSOT-23
  • Mounting TypeSurface Mount
See similar products in MOSFETs
Toshiba 2SA1721-O(TE85L,F) PNP Transistor, -100 mA, -300 V, 3-Pin SOT-346
  • TWD13.30
    Each (In a Pack of 25)
Toshiba 2SA1721-O(TE85L,F) PNP Transistor, -100 mA, -300 V, 3-Pin SOT-346
  • Transistor TypePNP
  • Maximum DC Collector Current-100 mA
  • Maximum Collector Emitter Voltage-300 V
  • Package TypeSOT-346 (SC-59)
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
  • TWD38.40
    Each (In a Pack of 5)
  • Also available in industry standard packaging
N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
  • Channel TypeN
  • Maximum Continuous Drain Current15 A
  • Maximum Drain Source Voltage40 V
  • SeriesU-MOSVIII-H
  • Package TypeDPAK (TO-252)
See similar products in MOSFETs
Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP Toshiba TPH1R306PL,L1Q(M
  • TWD101.40
    Each (In a Pack of 5)
  • Also available in industry standard packaging
Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP Toshiba TPH1R306PL,L1Q(M
  • Channel TypeN
  • Maximum Continuous Drain Current100 A
  • Maximum Drain Source Voltage60 V
  • Package TypeSOP
  • SeriesTPH1R306PL
See similar products in MOSFETs
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • TWD171.00Each
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba TBC847B,LM(T NPN Transistor, 200 mA, 50 V, 3-Pin SOT-23
  • TWD0.80
    Each (On a Reel of 3000)
Toshiba TBC847B,LM(T NPN Transistor, 200 mA, 50 V, 3-Pin SOT-23
  • Transistor TypeNPN
  • Maximum DC Collector Current200 mA
  • Maximum Collector Emitter Voltage50 V
  • Package TypeSOT-23
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
Toshiba 200V 1A, Rectifier Diode, 2-Pin S-FLAT CRH01(T5L,TEMQ)
  • TWD6.40
    Each (In a Pack of 10)
Toshiba 200V 1A, Rectifier Diode, 2-Pin S-FLAT CRH01(T5L,TEMQ)
  • Mounting TypeSurface Mount
  • Package TypeS-FLAT
  • Maximum Continuous Forward Current1A
  • Peak Reverse Repetitive Voltage200V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • TWD171.80
    Each (In a Tube of 25)
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
  • TWD136.00Each
Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current40 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba 85V 100mA, Dual High Speed Diode, 4-Pin SC-61 1SS272(F)
  • TWD5.20
    Each (In a Pack of 25)
Toshiba 85V 100mA, Dual High Speed Diode, 4-Pin SC-61 1SS272(F)
  • Mounting TypeSurface Mount
  • Package TypeSC-61
  • Maximum Continuous Forward Current100mA
  • Peak Reverse Repetitive Voltage85V
  • Diode ConfigurationIsolated
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP Toshiba TPH11006NL,LQ(S
  • TWD12.80
    Each (In a Pack of 20)
N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP Toshiba TPH11006NL,LQ(S
  • Channel TypeN
  • Maximum Continuous Drain Current40 A
  • Maximum Drain Source Voltage60 V
  • SeriesU-MOSVIII-H
  • Package TypeSOP
See similar products in MOSFETs
N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS Toshiba TK56A12N1,S4X(S
  • TWD51.80
    Each (In a Tube of 50)
N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS Toshiba TK56A12N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current56 A
  • Maximum Drain Source Voltage120 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
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