MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 122-0587
Mfr. Part No.MMBF170-7-F
TWD1.70
Each (On a Reel of 3000)
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N 500 mA 60 V 5.3 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 3V - 300 mW Single 1
RS Stock No. 708-2393
Mfr. Part No.MMBF170-7-F
TWD4.60
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N 500 mA 60 V 5.3 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 3V - 300 mW Single 1
RS Stock No. 897-7179
Mfr. Part No.SPW21N50C3FKSA1
BrandInfineon
TWD91.80
Each (In a Pack of 4)
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N 21 A 560 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.9V 2.1V 208 W Single 1
RS Stock No. 145-8724
Mfr. Part No.SPW21N50C3FKSA1
BrandInfineon
TWD85.30
Each (In a Tube of 30)
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N 21 A 560 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.9V 2.1V 208 W Single 1
RS Stock No. 159-6516
Mfr. Part No.IRFP460BPBF
BrandVishay
TWD55.10
Each (In a Tube of 25)
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 787-9140
Mfr. Part No.IRFP460BPBF
BrandVishay
TWD110.00
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 903-4074
Mfr. Part No.2N7000-D26Z
TWD4.10
Each (In a Pack of 100)
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N 200 mA 60 V 9 Ω TO-92 Through Hole 3 -40 V, +40 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 739-0224
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TWD6.80
Each (In a Pack of 10)
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS Stock No. 169-8553
Mfr. Part No.2N7000
TWD2.60
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 124-1310
Mfr. Part No.2N7000TA
TWD2.00
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS Stock No. 671-4733
Mfr. Part No.2N7000
TWD7.70
Each (In a Pack of 20)
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 864-8625
Mfr. Part No.FDPF770N15A
TWD34.00
Each (In a Pack of 10)
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N 10 A 150 V 77 mΩ TO-220F Through Hole 3 -20 V, +20 V Enhancement - 2V 21 W Single 1
RS Stock No. 166-3296
Mfr. Part No.FDPF770N15A
TWD32.00
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N 10 A 150 V 77 mΩ TO-220F Through Hole 3 -20 V, +20 V Enhancement - 2V 21 W Single 1
RS Stock No. 177-5507
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BrandSemelab
TWD3,738.00
Each (In a Tray of 25)
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N 10 A 70 V - DK Panel Mount 5 -20 V, +20 V Enhancement 7V - 175 W Common Source 2
RS Stock No. 738-7663
Mfr. Part No.D1008UK
BrandSemelab
TWD3,738.00
Each
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N 10 A 70 V - DK Panel Mount 5 -20 V, +20 V Enhancement 7V - 175 W Common Source 2
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Mfr. Part No.IRFS7530TRL7PP
BrandInfineon
TWD57.90
Each (On a Reel of 800)
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N 240 A 60 V 1.4 mΩ D2PAK (TO-263) Surface Mount 7 -20 V, +20 V Enhancement 3.7V 2.1V 375 W Single 1
RS Stock No. 178-0786
Mfr. Part No.IRFP9240PBF
BrandVishay
TWD78.80
Each (In a Tube of 25)
units
- - - - - - - - - - - - - -
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Mfr. Part No.IRFP9240PBF
BrandVishay
TWD87.00
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P 12 A 200 V 500 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
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BrandMicrochip
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Mfr. Part No.DN2540N3-G
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N 120 mA 400 V 25 Ω TO-92 Through Hole 3 -20 V, +20 V Depletion 3.5V - 1 W Single 1