MOSFETs | N-Channel | P-Channel | RS
Recently searched

    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18108 Products showing for MOSFETs

    Infineon
    N
    80 A
    55 V
    7 mO
    TO-220
    -
    Through Hole
    3
    -
    Enhancement
    2V
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Toshiba
    N
    49 A
    650 V
    55 mΩ
    TO-247
    TK
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    3.5V
    -
    400 W
    -
    Single
    15.94mm
    +150 °C
    1
    Si
    160 nC @ 10 V
    5.02mm
    DiodesZetex
    N
    500 mA
    50 V
    2 Ω
    SOT-23
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    1.5V
    -
    920 mW
    -
    Single
    3mm
    +150 °C
    1
    Si
    0.8 nC @ 10 V
    1.4mm
    DiodesZetex
    N
    150 mA
    60 V
    5 Ω
    SOT-23
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    2.4V
    -
    330 mW
    -
    Single
    3.05mm
    +150 °C
    1
    Si
    -
    1.4mm
    onsemi
    P
    20 A
    30 V
    5 mΩ
    SOIC
    PowerTrench
    Surface Mount
    8
    -25 V, +25 V
    Enhancement
    -
    1V
    2.5 W
    -
    Single
    5mm
    +150 °C
    1
    Si
    185 nC @ 10 V
    4mm
    Infineon
    P
    74 A
    55 V
    20 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    200 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    180 nC @ 10 V
    4.69mm
    DiodesZetex
    N
    115 mA
    60 V
    13.5 Ω
    SOT-323 (SC-70)
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    2V
    -
    200 mW
    -
    Single
    2.2mm
    +150 °C
    1
    Si
    -
    1.35mm
    Infineon
    N
    62 A
    30 V
    9 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    2.35V
    1.35V
    65 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    7.6 nC @ 4.5 V
    4.83mm
    Infineon
    P
    38 A
    100 V
    60 mΩ
    D2PAK (TO-263)
    HEXFET
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    170 W
    -
    Single
    10.67mm
    +150 °C
    1
    Si
    150 nC @ 10 V
    9.65mm
    STMicroelectronics
    N
    60 A
    60 V
    16 mΩ
    TO-220
    STripFET II
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    150 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    49 nC @ 10 V
    4.6mm
    ROHM
    P
    35 A
    40 V
    0.191 Ω
    DPAK (TO-252)
    -
    Surface Mount
    3
    -
    -
    2.5V
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    onsemi
    N
    115 mA
    60 V
    7.5 Ω
    SOT-23
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    -
    1V
    200 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    -
    1.3mm
    IXYS
    N
    310 A
    150 V
    4 mΩ
    SOT-227
    GigaMOS TrenchT2 HiperFET
    Screw Mount
    4
    -20 V, +20 V
    Enhancement
    5V
    2.5V
    1.07 kW
    -
    -
    38.23mm
    +175 °C
    1
    -
    715 nC @ 10 V
    25.07mm
    IXYS
    N
    36 A
    1000 V
    240 mΩ
    SOT-227
    HiperFET
    Screw Mount
    4
    -20 V, +20 V
    Enhancement
    5V
    -
    700 W
    -
    Single
    38.23mm
    +150 °C
    1
    Si
    380 nC @ 10 V
    25.42mm
    STMicroelectronics
    N
    18 A
    650 V
    190 mΩ
    TO-220FP
    MDmesh M2
    Through Hole
    3
    -25 V, +25 V
    Enhancement
    4V
    2V
    30 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    29 nC @ 10 V
    4.6mm
    onsemi
    N
    14 A
    50 V
    100 mΩ
    IPAK (TO-251)
    -
    Through Hole
    3
    -10 V, +10 V
    Enhancement
    -
    1V
    48 W
    -
    Single
    6.8mm
    +175 °C
    1
    Si
    25 nC @ 5 V, 40 nC @ 10 V
    2.5mm
    Nexperia
    P
    130 mA
    50 V
    10 Ω
    SOT-23 (TO-236AB)
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    2V
    0.8V
    250 mW
    -
    Single
    3mm
    +150 °C
    1
    Si
    -
    1.4mm
    onsemi
    N
    42 A
    60 V
    14.4 mΩ
    DFN
    -
    Surface Mount
    8
    ±20 V
    Enhancement
    2.2V
    1.2V
    37 W
    -
    -
    5.1mm
    +175 °C
    2
    -
    4.7 nC @ 4.5 V
    6.1mm
    Infineon
    N
    84 A
    60 V
    0.012 Ω
    D2PAK (TO-263)
    HEXFET
    Surface Mount
    3
    -
    Enhancement
    4V
    -
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Nexperia
    P
    180 mA
    50 V
    7.5 Ω
    SOT-23
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    2.1V
    1.1V
    420 mW
    -
    Single
    3mm
    +150 °C
    1
    Si
    0.26 nC @ 5 V
    1.4mm
    Results per page