MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



Looking for MOSFET Drivers?


...
Read more Read less

Filters

Viewing 61 - 80 of 11017 products
Results per page
Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 671-0841
Mfr. Part No.FDY3000NZ
TWD9.70
Each (In a Pack of 20)
units
N 600 mA 20 V 700 mΩ SOT-523 (SC-89) Surface Mount 6 -12 V, +12 V Enhancement - 0.6V 625 mW Isolated 2
RS Stock No. 124-1745
Mfr. Part No.BS170
TWD3.30
Each (In a Bag of 1000)
units
N 500 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3V 0.8V 830 mW Single 1
RS Stock No. 786-3625
Mfr. Part No.STF100N10F7
TWD77.20
Each (In a Pack of 5)
units
N 45 A 100 V 8 mΩ TO-220FP Through Hole 3 -20 V, +20 V Enhancement 4V 2V 30 W Single 1
RS Stock No. 671-4736
Mfr. Part No.BS170
TWD10.50
Each (In a Pack of 10)
units
N 500 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3V 0.8V 830 mW Single 1
RS Stock No. 541-1146
Mfr. Part No.IRFBG30PBF
BrandVishay
TWD67.00
Each
units
N 3.1 A 1000 V 5 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 541-1225
Mfr. Part No.IRF9540NPBF
BrandInfineon
TWD38.00
Each
units
P 23 A 100 V 117 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 140 W Single 1
RS Stock No. 671-0895
Mfr. Part No.FQB44N10TM
TWD53.00
Each
units
N 43 A 100 V 39 mΩ D2PAK (TO-263) Surface Mount 3 -25 V, +25 V Enhancement - 2V 3.75 W Single 1
RS Stock No. 178-4687
Mfr. Part No.BSS138LT3G
TWD1.10
Each (On a Reel of 10000)
units
- - - - - - - - - - - - - -
RS Stock No. 805-1126
Mfr. Part No.2N7002K
TWD3.50
Each (In a Pack of 100)
units
N 300 mA 60 V 4.8 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1V 350 mW Single 1
RS Stock No. 168-6982
Mfr. Part No.STF100N10F7
TWD65.30
Each (In a Tube of 50)
units
N 45 A 100 V 8 mΩ TO-220FP Through Hole 3 -20 V, +20 V Enhancement 4V 2V 30 W Single 1
RS Stock No. 761-6968
Mfr. Part No.RJK0653DPB-00#J5
TWD33.00
Each (In a Pack of 2)
units
N 45 A 60 V 6.1 mΩ LFPAK Surface Mount 5 -20 V, +20 V Enhancement 2.5V - 65 W Single 1
RS Stock No. 541-1691
Mfr. Part No.IRFD120PBF
BrandVishay
TWD29.00
Each
units
N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS Stock No. 738-4939
Mfr. Part No.BSS138-7-F
TWD3.50
Each (In a Pack of 100)
units
N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 300 mW Single 1
RS Stock No. 166-2990
Mfr. Part No.FDPF18N50T
TWD78.90
Each (In a Tube of 50)
units
N 18 A 500 V 265 mΩ TO-220F Through Hole 3 -30 V, +30 V Enhancement - 3V 38.5 W Single 1
RS Stock No. 166-1718
Mfr. Part No.FDN357N
TWD4.40
Each (On a Reel of 3000)
units
N 1.9 A 30 V 600 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1V 500 mW Single 1
RS Stock No. 687-5318
Mfr. Part No.STW11NK100Z
TWD204.00
Each
units
N 8.3 A 1000 V 1.38 Ω TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 230 W Single 1
RS Stock No. 178-0844
Mfr. Part No.IRFBF30PBF
BrandVishay
TWD62.80
Each (In a Tube of 50)
units
N 3.6 A 900 V 3.7 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 671-5183
Mfr. Part No.FQP7P06
TWD30.20
Each (In a Pack of 5)
units
P 7 A 60 V 410 mΩ TO-220AB Through Hole 3 -25 V, +25 V Enhancement - 2V 45 W Single 1
RS Stock No. 688-7204
Mfr. Part No.IRLB3034PBF
BrandInfineon
TWD96.50
Each (In a Pack of 2)
units
N 343 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.5V 1V 375 W Single 1
RS Stock No. 178-0921
Mfr. Part No.IRFD120PBF
BrandVishay
TWD19.70
Each (In a Tube of 100)
units
N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1