DiodesZetex 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SC-70 2N7002W-7-F
- RS Stock No.:
- 708-2399
- Mfr. Part No.:
- 2N7002W-7-F
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD235.00
(exc. GST)
TWD247.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,500 unit(s) shipping from January 26, 2026
- Plus 5,850 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | TWD4.70 | TWD235.00 |
| 750 - 1450 | TWD4.50 | TWD225.00 |
| 1500 + | TWD4.40 | TWD220.00 |
*price indicative
- RS Stock No.:
- 708-2399
- Mfr. Part No.:
- 2N7002W-7-F
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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