onsemi Dual 2 Type N-Channel Power MOSFET, 42 A, 60 V Enhancement, 8-Pin DFN NTMFD5C674NLT1G
- RS Stock No.:
- 178-4629
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD222.00
(exc. GST)
TWD233.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 2,980 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 370 | TWD22.20 | TWD222.00 |
| 380 - 740 | TWD21.70 | TWD217.00 |
| 750 + | TWD21.30 | TWD213.00 |
*price indicative
- RS Stock No.:
- 178-4629
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 175°C | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.05mm | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 175°C | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 1.05mm | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low on resistance
High current capability
Small footprint (5x6 mm)
Benefits
Minimal conduction losses
Robust load performance
Compact Design
Applications
Motor Control
Synchronous DC to DC Regulator
Power Switches (High Side Driver,Low Side Driver, H-Bridges etc.)
Battery Management and Protection
End Products
Battery Packs
Power Supplies
Rotary Drones
Power Tools
Power Over Ethernet (PoE)
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