IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227
- RS Stock No.:
- 168-4473
- Mfr. Part No.:
- IXFN36N100
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 10 units)*
TWD25,117.00
(exc. GST)
TWD26,372.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 10 unit(s) shipping from April 15, 2026
- Plus 10 unit(s) shipping from April 22, 2026
- Plus 10 unit(s) shipping from July 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | TWD2,511.70 | TWD25,117.00 |
| 20 + | TWD2,461.50 | TWD24,615.00 |
*price indicative
- RS Stock No.:
- 168-4473
- Mfr. Part No.:
- IXFN36N100
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | SOT-227 | |
| Series | HiperFET | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 380nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 700W | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Width | 25.42 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type SOT-227 | ||
Series HiperFET | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 380nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 700W | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Width 25.42 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X