Nexperia BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84,215
- RS Stock No.:
- 436-8091
- Mfr. Part No.:
- BSS84,215
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD43.00
(exc. GST)
TWD45.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 950 unit(s) shipping from January 26, 2026
- Plus 5,850 unit(s) shipping from February 04, 2026
- Plus 3,000 unit(s) shipping from June 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD4.30 | TWD43.00 |
| 50 - 240 | TWD4.20 | TWD42.00 |
| 250 + | TWD3.40 | TWD34.00 |
*price indicative
- RS Stock No.:
- 436-8091
- Mfr. Part No.:
- BSS84,215
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 130mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS84 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250mW | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 130mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS84 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250mW | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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