Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220 IRF4905PBF
- RS Stock No.:
- 540-9799
- Mfr. Part No.:
- IRF4905PBF
- Manufacturer:
- Infineon
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TWD73.00
(exc. GST)
TWD76.65
(inc. GST)
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- Plus 357 unit(s) shipping from June 15, 2026
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Units | Per unit |
|---|---|
| 1 - 12 | TWD73.00 |
| 13 - 24 | TWD72.00 |
| 25 + | TWD66.00 |
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- RS Stock No.:
- 540-9799
- Mfr. Part No.:
- IRF4905PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF
This MOSFET provides a versatile solution for power management across various industrial applications. It is designed for high efficiency and reliability, making it essential for professionals in the electronics and electrical sectors. With robust performance characteristics, this product enhances circuit design and ensures optimal operation in challenging environments.
Features & Benefits
• High continuous drain current capability of 74A supports demanding applications
• Maximum drain-source voltage of 55V enables effective power management
• Low on-resistance of 20mΩ improves energy efficiency
• Designed as an enhancement mode MOSFET for precise control
• Utilises a TO-220AB package for easy mounting and integration
Applications
• Used in DC-DC converters for efficient power conversion
• Ideal for motor control requiring substantial current management
• Employed in power supplies for streamlined operation
• Suitable for thermal management in high-load environments
• Used in automation systems for dependable switching
How does the low on-resistance benefit circuit design?
The reduced on-resistance minimises power losses during operation, enhancing overall energy efficiency and performance, which is vital in high-current applications.
What is the significance of using a TO-220AB package?
The TO-220AB package allows for efficient heat dissipation while providing ease of installation, making it a preferred choice in industrial applications.
Can this component handle high-temperature environments?
Yes, it operates effectively at temperatures up to +175°C, suitable for rigorous applications.
What kind of applications require this MOSFET's high continuous drain current?
The high continuous drain current is suited for applications such as motor drives, power converters, and other systems that necessitate robust power handling.
How does the gate-threshold voltage impact its performance?
A gate threshold voltage ranging from 2V to 4V ensures reliable switching behaviour, contributing to precise control in various electronic circuits.
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