Toshiba TK N-Channel MOSFET, 49 A, 650 V Enhancement, 3-Pin TO-247 TK49N65W,S1F(S
- RS Stock No.:
- 896-2397
- Mfr. Part No.:
- TK49N65W,S1F(S
- Manufacturer:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD432.00
(exc. GST)
TWD453.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 17 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 19 | TWD432.00 |
| 20 - 49 | TWD419.00 |
| 50 - 99 | TWD407.00 |
| 100 - 249 | TWD397.00 |
| 250 + | TWD389.00 |
*price indicative
- RS Stock No.:
- 896-2397
- Mfr. Part No.:
- TK49N65W,S1F(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 400W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Width | 5.02mm | |
| Standards/Approvals | No | |
| Length | 15.94mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 400W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Width 5.02mm | ||
Standards/Approvals No | ||
Length 15.94mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
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