Vishay SI N channel-Channel Single MOSFETs, 149 A, 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3

N
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TWD63.00

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TWD66.15

(inc. GST)

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1 - 9TWD63.00
10 - 24TWD41.00
25 +TWD24.00

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RS Stock No.:
829-365
Mfr. Part No.:
SIR580LDP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

N channel

Maximum Continuous Drain Current Id

149A

Maximum Drain Source Voltage Vds

80V

Package Type

P

Series

SI

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0026Ω

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

38.5nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.15mm

Height

1.04mm

Standards/Approvals

RoHS Compliant

Length

6.15mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET, designed for high-efficiency switching applications, providing robust performance in demanding conditions with its low on-state resistance and comprehensive testing certifications.

Rated for a drain-source voltage of 80 V, ensuring reliable operation under various conditions

Features a maximum on-resistance of just 0.0026 Ohm at 10 V, promoting energy efficiency

Incorporates a low gate threshold voltage of 1 to 2.5 V, enhancing compatibility with a wide range of circuits

Offers a robust continuous drain current of 149 A, suitable for high-power applications

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