Vishay SI N channel-Channel Single MOSFETs, 6 A, 30 V Enhancement Mode, 6-Pin TSOP-6 SI3410BDV-T1-GE3

N
Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

TWD8.00

(exc. GST)

TWD8.40

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from August 17, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 24TWD8.00
25 - 99TWD5.00
100 +TWD3.00

*price indicative

RS Stock No.:
829-360
Mfr. Part No.:
SI3410BDV-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

SI

Package Type

TSOP-6

Mount Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance Rds

0.0192Ω

Channel Mode

Enhancement Mode

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

19nC

Maximum Power Dissipation Pd

3.3W

Maximum Operating Temperature

150°C

Width

1.70mm

Height

1mm

Standards/Approvals

RoHS Compliant

Length

3mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay high-performance N-Channel MOSFET designed for efficient load management in electronic circuits. It operates at a maximum drain-source voltage of 30 V, optimising power usage in various applications.

Delivers maximum continuous drain current of 6 A, ensuring reliability under load

Features a low on-state resistance of 0.0192 Ohm at 10 V, aiding energy efficiency

Built with a Compact TSOP-6 packaging, facilitating integration into space-constrained designs

Incorporates Advanced TrenchFET technology for enhanced switching performance

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy