Vishay SIR N channel-Channel Single MOSFETs, 203 A, 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3

N
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Subtotal (1 unit)*

TWD105.00

(exc. GST)

TWD110.25

(inc. GST)

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  • Shipping from August 17, 2027
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Units
Per unit
1 - 9TWD105.00
10 - 24TWD68.00
25 - 99TWD40.00
100 - 499TWD39.00
500 +TWD38.00

*price indicative

RS Stock No.:
829-344
Mfr. Part No.:
SIRS5100EPW-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

N channel

Maximum Continuous Drain Current Id

203A

Maximum Drain Source Voltage Vds

100V

Series

SIR

Package Type

P

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0027Ω

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

205W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Maximum Operating Temperature

175°C

Width

5.15mm

Standards/Approvals

RoHS Compliant

Length

6.15mm

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay power MOSFET delivers high performance for applications demanding efficient switching. With its Advanced design, it enables significant reductions in power loss and enhanced overall thermal management.

Provides a drain-source voltage rating of 100 V, ensuring reliable operation

Achieves a low on-state resistance, which minimises power loss during conduction

Offers a continuous drain current of up to 203 A, suitable for high-power demands

Features a Pb-free and halogen-free construction for compliance with environmental regulations

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