Vishay SISS N-Channel Single MOSFETs, 33.7 A, 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- RS Stock No.:
- 829-346
- Mfr. Part No.:
- SISS128LDN-T1-UE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD38.00
(exc. GST)
TWD39.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 15, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | TWD38.00 |
| 25 - 99 | TWD25.00 |
| 100 - 499 | TWD15.00 |
| 500 + | TWD14.00 |
*price indicative
- RS Stock No.:
- 829-346
- Mfr. Part No.:
- SISS128LDN-T1-UE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 33.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SISS | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0156Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 33.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SISS | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0156Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS Compliant | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay high-performance N-Channel MOSFET designed for efficient power management in a Compact package, ensuring reliable operation across various demanding applications.
TrenchFET Gen IV technology enables improved efficiency and thermal performance
Low RDS(on) values, optimising conduction losses during operation
Tested for high reliability with 100% R and UIS stressed units
Robust specifications with a 80V drain-source voltage rating and a maximum current of 33.7A
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