Vishay SIR N channel-Channel Single MOSFETs, 125 A, 80 V Enhancement Mode, 8-Pin P SIR680ADP-T1-UE3
- RS Stock No.:
- 829-343
- Mfr. Part No.:
- SIR680ADP-T1-UE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD79.00
(exc. GST)
TWD82.95
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 16, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD79.00 |
| 10 - 24 | TWD51.00 |
| 25 - 99 | TWD30.00 |
| 100 + | TWD29.00 |
*price indicative
- RS Stock No.:
- 829-343
- Mfr. Part No.:
- SIR680ADP-T1-UE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | P | |
| Series | SIR | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00288Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.15mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type P | ||
Series SIR | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00288Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.15mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay power MOSFET designed for efficient switching applications, featuring a Compact design that optimises space utilisation and thermal performance in circuit designs.
N-Channel 80V MOSFET with TrenchFET Gen IV technology for superior performance
Very low R-DS(on) rating reduces power loss during operation
Pulsed drain current capability of 300A supports demanding applications
Enhanced thermal characteristics ensure reliability at elevated temperatures
Related links
- Vishay SIR N channel-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3
- Vishay TrenchFET N-Channel Single MOSFETs 70 V Enhancement Mode, 8-Pin PowerPAIR 3 x 3FS SIZF458LDT-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- Vishay SQJ N channel-Channel Single MOSFETs 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3