Vishay SI N channel-Channel Single MOSFETs, 3.4 A, 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3
- RS Stock No.:
- 829-363
- Mfr. Part No.:
- SIA432BDJ-T1-GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD8.00
(exc. GST)
TWD8.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 17, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | TWD8.00 |
| 25 - 99 | TWD5.00 |
| 100 + | TWD3.00 |
*price indicative
- RS Stock No.:
- 829-363
- Mfr. Part No.:
- SIA432BDJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SI | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0192Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 15.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.75mm | |
| Width | 2.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SI | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0192Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 15.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.75mm | ||
Width 2.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient power management in various applications. Its robust construction enables reliable function under demanding conditions.
30 V drain-source voltage facilitates versatile application range
Max on-state resistance of 0.0192 Ohm at 10 V enhances power efficiency
Configured as a single device, optimising space and performance
Designed with TrenchFET technology for superior switching capabilities
Related links
- Vishay SI N channel-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin TSOP-6 SI3410BDV-T1-GE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 30 V Enhancement Mode, 8-Pin TSOP-6 SI7804BDN-T1-GE3
- Vishay TrenchFET N-Channel Single MOSFETs 20 V Enhancement Mode, 6-Pin TSOP-6 SI3552BDV-T1-GE3
- Vishay SQ P-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin TSOP-6 SQ3457CEV-T1_GE3
- Vishay SISS N channel-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- Vishay SISS N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3