Vishay SI N channel-Channel Single MOSFETs, 6 A, 30 V Enhancement Mode, 8-Pin TSOP-6 SI7804BDN-T1-GE3

N
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TWD9.00

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TWD9.45

(inc. GST)

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1 - 24TWD9.00
25 - 99TWD6.00
100 +TWD4.00

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RS Stock No.:
829-361
Mfr. Part No.:
SI7804BDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

N channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

SI

Package Type

TSOP-6

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0192Ω

Channel Mode

Enhancement Mode

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

19.9W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

3.30mm

Length

3.30mm

Height

1.07mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay high-performance N-Channel MOSFET designed for efficient DC/DC conversion and system power applications, ensuring reliable operation within specified voltage limits.

TrenchFET Gen III technology enhances efficiency and performance

Guaranteed 100% R testing ensures high reliability

Material categorised for compliance, supporting environmental regulations

Maximum continuous drain current of 6A boosts versatility

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