Vishay SISS N-Channel Single MOSFETs, 14.2 A, 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- RS Stock No.:
- 829-345
- Mfr. Part No.:
- SISS110DN-T1-GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD20.00
(exc. GST)
TWD21.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 18, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | TWD20.00 |
| 25 - 99 | TWD13.00 |
| 100 + | TWD8.00 |
*price indicative
- RS Stock No.:
- 829-345
- Mfr. Part No.:
- SISS110DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SISS | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 24W | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Height | 1.04mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SISS | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 24W | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Height 1.04mm | ||
Standards/Approvals RoHS Compliant | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET delivers efficient power management solutions with excellent conduction capabilities. Designed for demanding applications, it offers superior switching and thermal performance.
Features TrenchFET Gen IV technology for superior efficiency and performance
Guaranteed 100% RDS(on) and UIS tested for reliability in operation
Continuous drain current rating of 11 A ensures robust delivery
Optimised for low RDS(on) values, enhancing thermal performance
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