Vishay SQJ N channel-Channel Single MOSFETs, 100 A, 60 V Enhancement Mode, 8-Pin P SQJ766EP-T1_GE3
- RS Stock No.:
- 829-354
- Mfr. Part No.:
- SQJ766EP-T1_GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD80.00
(exc. GST)
TWD84.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 17, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD80.00 |
| 10 - 24 | TWD52.00 |
| 25 - 99 | TWD31.00 |
| 100 - 499 | TWD30.00 |
| 500 + | TWD29.00 |
*price indicative
- RS Stock No.:
- 829-354
- Mfr. Part No.:
- SQJ766EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | P | |
| Series | SQJ | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0046Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 93W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.15mm | |
| Width | 4.90mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type P | ||
Series SQJ | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0046Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 93W | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.15mm | ||
Width 4.90mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay high-performance automotive dual N-Channel MOSFET designed for demanding applications. It delivers robust efficiency and reliability in various electronic systems.
TrenchFET Gen IV technology ensures efficient performance
AEC-Q101 qualified for automotive applications
100% R and UIS tested for reliability
Low on-state resistance reduces energy loss
Related links
- Vishay SQJ N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ160ELP-T1_GE3
- Vishay SQJ N channel-Channel Single MOSFETs 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3
- Vishay SQJ P-Channel Single MOSFETs -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- Vishay SIR N channel-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3
- Vishay SISS N channel-Channel Single MOSFETs 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3