Vishay SQJ N channel-Channel Single MOSFETs, 268 A, 60 V Enhancement Mode, 8-Pin P SQJ160ELP-T1_GE3

N
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Subtotal (1 unit)*

TWD72.00

(exc. GST)

TWD75.60

(inc. GST)

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  • Shipping from March 18, 2027
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Units
Per unit
1 - 9TWD72.00
10 - 24TWD47.00
25 - 99TWD28.00
100 +TWD27.00

*price indicative

RS Stock No.:
829-352
Mfr. Part No.:
SQJ160ELP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

N channel

Maximum Continuous Drain Current Id

268A

Maximum Drain Source Voltage Vds

60V

Package Type

P

Series

SQJ

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00182Ω

Channel Mode

Enhancement Mode

Typical Gate Charge Qg @ Vgs

91nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

245W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Width

4.90mm

Length

6.15mm

Standards/Approvals

RoHS Compliant

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
GB
The Vishay high-performance N-Channel MOSFET designed for automotive applications, ensuring reliability and efficiency in demanding environments.

TrenchFET technology enhances performance and reduces energy loss

AEC-Q101 qualified, ensuring compliance for automotive use

Extensive R and UIS testing guarantees robust functionality

Designed for high current capabilities with a maximum continuous drain current of 268 A

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