Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23

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TWD16,500.00

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TWD17,340.00

(inc. GST)

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3000 - 12000TWD5.50TWD16,500.00
15000 +TWD5.40TWD16,200.00

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RS Stock No.:
911-4971
Mfr. Part No.:
BSS126H6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1mm

Length

2.9mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE

Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 500mW Maximum Power Dissipation - BSS126H6327XTSA2


This MOSFET is a high-voltage switching transistor designed for surface-mount applications where a compact footprint and extended temperature range are required. It operates as an N-channel depletion device and provides switching and control functionality in power conversion and protection circuits while withstanding harsh ambient conditions.

Features and Benefits:


• 600V drain-source rating enables high-voltage switching
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads

Applications


• Suitable for high-voltage gate protection circuits
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies

What package type is used for compact PCB mounting?


It is supplied in a small SOT-23 surface-mount package for dense board layouts.

How does it perform across temperature extremes?


The device is specified to operate from -55°C up to 150°C for broad environmental ranges.

What is the diode forward characteristic for reverse conduction considerations?


The intrinsic diode has a forward voltage of 1.2V relevant when the body diode conducts.

What pin configuration and count should I expect when designing footprints?


The device utilises three pins, consistent with single-transistor SOT-23 layouts.

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