Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2
- RS Stock No.:
- 753-2841
- Distrelec Article No.:
- 304-45-304
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 25 units)*
TWD345.00
(exc. GST)
TWD362.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from March 22, 2027
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | TWD13.80 | TWD345.00 |
| 125 - 475 | TWD13.20 | TWD330.00 |
| 500 - 1225 | TWD12.60 | TWD315.00 |
| 1250 + | TWD11.90 | TWD297.50 |
*price indicative
- RS Stock No.:
- 753-2841
- Distrelec Article No.:
- 304-45-304
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Width 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 230mA Maximum Continuous Drain Current - BSS159NH6327XTSA2
Features and Benefits:
• 8 Ω maximum Rds provides predictable conduction losses
• 230 mA continuous drain current supports small-load drivers
• 360 mW power dissipation limits thermal stress under load
• 1.4 nC typical gate charge allows faster gate transitions
• 20V maximum gate voltage protects gate from overdrive
Applications
• Ideal for on-board power-management modules
• Used with sensor interfaces requiring controlled switching
• Can be used for small relay or solenoid drivers
• Suitable for surface-mount prototyping and compact designs
What thermal range can it withstand in harsh environments?
How does the package affect board assembly and layout?
What channel behaviour should designers expect at idle?
Are there limits on mechanical mounting or pin count considerations?
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