Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2
- RS Stock No.:
- 753-2841
- Distrelec Article No.:
- 304-45-304
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD345.00
(exc. GST)
TWD362.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from January 11, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | TWD13.80 | TWD345.00 |
| 125 - 475 | TWD13.20 | TWD330.00 |
| 500 - 1225 | TWD12.60 | TWD315.00 |
| 1250 + | TWD11.90 | TWD297.50 |
*price indicative
- RS Stock No.:
- 753-2841
- Distrelec Article No.:
- 304-45-304
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 230mA Maximum Continuous Drain Current - BSS159NH6327XTSA2
This MOSFET is a compact N-channel transistor designed for low-power switching and control tasks in automotive and industrial environments. It operates across a wide temperature span and is intended for surface-mounted circuit designs where robust voltage handling and modest current capability are required. The device suits power-management roles within constrained board space and regulated voltage domains.
Features and Benefits:
• 60V drain-source rating enables higher-voltage switching applications
• 8 Ω maximum Rds provides predictable conduction losses
• 230 mA continuous drain current supports small-load drivers
• 360 mW power dissipation limits thermal stress under load
• 1.4 nC typical gate charge allows faster gate transitions
• 20V maximum gate voltage protects gate from overdrive
• 8 Ω maximum Rds provides predictable conduction losses
• 230 mA continuous drain current supports small-load drivers
• 360 mW power dissipation limits thermal stress under load
• 1.4 nC typical gate charge allows faster gate transitions
• 20V maximum gate voltage protects gate from overdrive
Applications
• Suitable for low-current automotive control circuits
• Ideal for on-board power-management modules
• Used with sensor interfaces requiring controlled switching
• Can be used for small relay or solenoid drivers
• Suitable for surface-mount prototyping and compact designs
• Ideal for on-board power-management modules
• Used with sensor interfaces requiring controlled switching
• Can be used for small relay or solenoid drivers
• Suitable for surface-mount prototyping and compact designs
What thermal range can it withstand in harsh environments?
The component functions from -55 °C up to 150 °C, allowing use across extended ambient and engine-bay temperatures.
How does the package affect board assembly and layout?
The SOT-23 3-pin surface-mount package reduces required PCB area and supports automated pick-and-place assembly for compact layouts.
What channel behaviour should designers expect at idle?
It is a depletion-mode N-channel device, so designers should account for channel conduction characteristics when establishing off-state biasing.
Are there limits on mechanical mounting or pin count considerations?
The device is a 3-pin SMD part intended for standard soldering processes with standard footprint constraints.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- Infineon BSS138I Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 BSS138IXTSA1
- Infineon BSS138I Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23