Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- RS Stock No.:
- 236-4398
- Mfr. Part No.:
- BSS126IXTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD76.00
(exc. GST)
TWD79.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 4,180 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD7.60 | TWD76.00 |
| 20 - 90 | TWD7.50 | TWD75.00 |
| 100 - 240 | TWD7.20 | TWD72.00 |
| 250 - 490 | TWD6.90 | TWD69.00 |
| 500 + | TWD6.70 | TWD67.00 |
*price indicative
- RS Stock No.:
- 236-4398
- Mfr. Part No.:
- BSS126IXTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 0.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Length 3mm | ||
Automotive Standard No | ||
Infineon SIPMOS® Series MOSFET, 600V Maximum Drain Source Voltage, 0.5W Maximum Power Dissipation - BSS126IXTSA1
This MOSFET is a small-signal, N-channel depletion-mode transistor designed for surface-mounted electronics requiring high-voltage switching in Compact footprints. It operates across a wide temperature range and is intended for low-current applications where a depletion-mode device is preferred to provide normally-on behaviour and simplified gate control.
Features and Benefits:
• Maximum drain-source voltage 600 V enables high-voltage switching
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets
Applications
• Suitable for high-voltage biasing networks in analogue designs
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters
What gate voltage range can be applied safely?
A gate-to-source potential up to 20 V is permissible for normal operation.
What thermal range will the device tolerate during use?
It is rated to function between −55 °C and 150 °C for varied environments.
How is the component packaged for PCB assembly?
It is supplied in a SOT-23 surface-mount package suitable for automated placement.
What mechanical envelope should be allowed on the PCB footprint?
The package measures approximately 3 mm length, 1.4 mm width and 1.1 mm height for land-pattern planning.
Does the device meet automotive-grade classification?
It is not specified as an automotive-standard component and should not be assumed to meet those criteria.
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