Infineon SIPMOS N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2
- RS Stock No.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 25 units)*
TWD265.00
(exc. GST)
TWD278.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from April 05, 2027
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD10.60 | TWD265.00 |
| 750 - 1475 | TWD10.40 | TWD260.00 |
| 1500 + | TWD9.70 | TWD242.50 |
*price indicative
- RS Stock No.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 820mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 820mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.9mm | ||
Width 1.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 600V Drain Source Voltage, 21mA Continuous Drain Current - BSS127H6327XTSA2
Features and Benefits:
• 0.65 nC typical gate charge enables faster, lower-loss switching
• 600 Ω maximum RDS(on) reduces off-state leakage in high-voltage circuits
• 21 mA continuous drain current suits low-current control functions
• 500 mW maximum power dissipation manages thermal loading in compact layouts
• VGS rated to 20V allows compatibility with common gate-drive voltages
Applications
• Ideal for automotive-grade sensor and auxiliary circuits
• Used with compact switching regulators and flyback stages
• Can be used for gate-level signal translation in protection circuits
• Suitable for small-form-factor power-management modules
What package and mounting style does it use for PCB assembly?
What thermal extremes can it withstand during operation?
How many electrical connections are available for circuit integration?
Is the device qualified for automotive applications?
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