Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2

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Subtotal (1 pack of 25 units)*

TWD202.50

(exc. GST)

TWD212.50

(inc. GST)

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Units
Per unit
Per Pack*
25 - 725TWD8.10TWD202.50
750 - 1475TWD7.90TWD197.50
1500 +TWD7.40TWD185.00

*price indicative

Packaging Options:
RS Stock No.:
753-2832
Mfr. Part No.:
BSS127H6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.82V

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

0.65nC

Maximum Operating Temperature

150°C

Width

1.3 mm

Height

1mm

Standards/Approvals

No

Length

2.9mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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