Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

RS Stock No.:: 753-2838
Distrelec Article No.:: 304-45-303
Mfr. Part No.:: BSS126H6327XTSA2
Manufacturer:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

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Subtotal (1 pack of 25 units)*

TWD355.00

(exc. GST)

TWD372.75

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

Plus 400 unit(s) shipping from August 10, 2026

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Units	Per unit	Per Pack*
25 +	TWD14.20	TWD355.00

*price indicative

RS Stock No.:: 753-2838
Distrelec Article No.:: 304-45-303
Mfr. Part No.:: BSS126H6327XTSA2
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21mA
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	700Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.4nC
	Maximum Power Dissipation Pd	500mW
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.9mm
	Height	1mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21mA
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 700Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.4nC
	Maximum Power Dissipation Pd 500mW
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.9mm
	Height 1mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 500mW Maximum Power Dissipation - BSS126H6327XTSA2

This MOSFET is a high-voltage switching transistor designed for surface-mount applications where a compact footprint and extended temperature range are required. It operates as an N-channel depletion device and provides switching and control functionality in power conversion and protection circuits while withstanding harsh ambient conditions.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads

Applications

• Suitable for high-voltage gate protection circuits
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies

What package type is used for compact PCB mounting?

It is supplied in a small SOT-23 surface-mount package for dense board layouts.

How does it perform across temperature extremes?

The device is specified to operate from -55°C up to 150°C for broad environmental ranges.

What is the diode forward characteristic for reverse conduction considerations?

The intrinsic diode has a forward voltage of 1.2V relevant when the body diode conducts.

What pin configuration and count should I expect when designing footprints?

The device utilises three pins, consistent with single-transistor SOT-23 layouts.