Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

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Subtotal (1 pack of 25 units)*

TWD305.00

(exc. GST)

TWD320.25

(inc. GST)

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Units
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Per Pack*
25 +TWD12.20TWD305.00

*price indicative

Packaging Options:
RS Stock No.:
753-2838
Distrelec Article No.:
304-45-303
Mfr. Part No.:
BSS126H6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

500mW

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1mm

Standards/Approvals

No

Length

2.9mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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