Vishay SI N-Channel MOSFET, 5 A, 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3
- RS Stock No.:
- 279-9898
- Mfr. Part No.:
- SI4848BDY-T1-GE3
- Manufacturer:
- Vishay
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TWD248.00
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TWD260.40
(inc. GST)
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | TWD24.80 | TWD248.00 | - |
| 50 - 90 | TWD18.60 | TWD186.00 | 24% |
| 100 - 240 | TWD16.50 | TWD165.00 | 33% |
| 250 - 990 | TWD16.30 | TWD163.00 | 34% |
| 1000 + | TWD15.70 | TWD157.00 | 36% |
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- RS Stock No.:
- 279-9898
- Mfr. Part No.:
- SI4848BDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | SI | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.089Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series SI | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.089Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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