Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- RS Stock No.:
- 268-8311
- Mfr. Part No.:
- SIHK105N60E-T1-GE3
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD380.00
(exc. GST)
TWD399.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,050 unit(s) shipping from June 15, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD190.00 | TWD380.00 |
| 50 - 98 | TWD171.00 | TWD342.00 |
| 100 - 248 | TWD140.50 | TWD281.00 |
| 250 + | TWD137.00 | TWD274.00 |
*price indicative
- RS Stock No.:
- 268-8311
- Mfr. Part No.:
- SIHK105N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHK | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHK | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 24A Drain Current - SIHK105N60E-T1-GE3
This MOSFET is a high-voltage N-channel enhancement device designed for power switching in industrial and electronic systems. It operates across a broad temperature range and is intended for PCB mounting in applications that require high drain-source voltage handling and substantial current capability. The component is supplied in a Compact PowerPAK package suitable for dense board layouts.
Features and Benefits:
• 650V maximum drain-source voltage enables high-voltage switching applications • 24A continuous drain current supports substantial load currents • 0.1Ω Rds(on) reduces conduction losses and improves efficiency • 132W power dissipation allows sustained power handling in thermal designs • 53nC typical gate charge at Vgs limits switching energy for Faster transitions • 150°C maximum operating temperature permits elevated thermal operating envelopes
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive inverter stages • Used for switched-mode power supply primary-side switches • Can be used for photovoltaic inverter power stages • Suitable for power-factor-correction circuits
What is the allowable gate drive voltage for safe operation?
The gate-source voltage must not exceed 30V to prevent gate-oxide overstress and ensure reliable switching.
How does the device behave at low temperatures in cold-start conditions?
It is specified to operate down to -55°C, maintaining enhancement-mode conduction characteristics at sub-zero temperatures.
What package and pin configuration aid PCB assembly?
The component is supplied in a PowerPAK 10x12 package with eight pins, facilitating automated soldering and thermal contact on PCB layouts.
How does the typical gate charge affect switching design?
A 53nC gate charge at the rated gate drive influences gate-driver sizing and switching losses, informing selection of driver current capability.
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