Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
- RS Stock No.:
- 268-8316
- Mfr. Part No.:
- SIHK185N60EF-T1GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 2 units)*
TWD397.00
(exc. GST)
TWD416.84
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 2,000 unit(s) shipping from August 14, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD198.50 | TWD397.00 |
| 50 - 98 | TWD177.50 | TWD355.00 |
| 100 - 248 | TWD146.00 | TWD292.00 |
| 250 + | TWD143.50 | TWD287.00 |
*price indicative
- RS Stock No.:
- 268-8316
- Mfr. Part No.:
- SIHK185N60EF-T1GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.193Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 114W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.193Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 114W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHK185N60EF-T1GE3
Features and Benefits:
• 16A continuous drain current supporting substantial load currents
• 114W power dissipation permitting sustained power handling
• 0.193Ω Rds(on) reducing conduction losses under load
• 32nC typical gate charge allowing predictable switching performance
• 30V maximum gate-source voltage providing robust gate tolerance
Applications
• Ideal for industrial motor drives and inverter stages
• Used with renewable energy converters handling elevated voltages
• Can be used for power factor correction circuits on PCBs
• Suitable for general high-power transistor replacement in assemblies
What thermal range can it tolerate in demanding environments?
What mounting style does it require for PCB integration?
How many pins are available for connection and grounding schemes?
Is it suitable for automotive-specific standards?
Related links
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