Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3
- RS Stock No.:
- 268-8312
- Mfr. Part No.:
- SIHK125N60EF-T1GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 2000 units)*
TWD189,400.00
(exc. GST)
TWD198,880.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from September 23, 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | TWD94.70 | TWD189,400.00 |
*price indicative
- RS Stock No.:
- 268-8312
- Mfr. Part No.:
- SIHK125N60EF-T1GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.125Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 132W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.125Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 132W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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