Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

RS Stock No.:: 268-8312
Mfr. Part No.:: SIHK125N60EF-T1GE3
Manufacturer:: Vishay

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

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Subtotal (1 reel of 2000 units)*

TWD189,400.00

(exc. GST)

TWD198,880.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

Temporarily out of stock

Shipping from February 16, 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2000 +	TWD94.70	TWD189,400.00

*price indicative

RS Stock No.:: 268-8312
Mfr. Part No.:: SIHK125N60EF-T1GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.125Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	132W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.125Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 132W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK125N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHK125N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control on printed circuit boards. It operates across a wide thermal range and is intended for applications requiring robust voltage handling and moderate current capacity in a PCB-mounted PowerPAK package.

Features and Benefits:

• 650V drain capability for high-voltage switching
• 21A continuous drain current for steady power delivery
• 0.125Ω low Rds(on) to reduce conduction losses
• 132W power dissipation for thermal headroom
• 45nC typical gate charge for predictable switching energy
• 30V gate-source rating for flexible gate drive levels

Applications

• Suitable for switch-mode power supplies in industrial equipment
• Ideal for high-voltage motor-drive front ends
• Used with isolated gate drivers in power converters
• Can be used for power-factor-correction stages
• Suitable for inverter circuits in renewable-energy systems

What package is provided for PCB assembly and thermal management?

The component is supplied in a PowerPAK 10x12 surface-mount package designed for PCB mounting to assist heat transfer to the board and facilitate solder-based thermal paths.

What thermal extremes can the device withstand in operation?

It is specified to function from -55°C up to 150°C, enabling use in environments with substantial temperature variation.

How does the device behave as a gate-driven switch?

It is an enhancement-mode N-channel MOSFET that requires a positive gate-source voltage up to its 30V limit to conduct, and its typical gate charge of 45nC informs switching-energy calculations.

Are there any environmental or regulatory attributes noted?

The device complies with RoHS requirements for restricted substances, aligning with standard electronic component environmental directives.