Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

RS Stock No.:: 268-8310
Mfr. Part No.:: SIHK105N60E-T1-GE3
Manufacturer:: Vishay

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

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Subtotal (1 reel of 2000 units)*

TWD245,800.00

(exc. GST)

TWD258,080.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

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2,000 left, ready to ship from another location

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Units	Per unit	Per Reel*
2000 +	TWD122.90	TWD245,800.00

*price indicative

RS Stock No.:: 268-8310
Mfr. Part No.:: SIHK105N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	53nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	132W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 53nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 132W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK105N60E-T1-GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60E-T1-GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching on printed circuit boards. It operates across a wide temperature span for industrial environments and is suited to applications requiring significant power handling and elevated drain-source voltage resilience. The device is mounted in a low-profile PowerPAK package to facilitate thermal management on PCB assemblies.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching
• 24A continuous drain current supports heavy load currents
• 0.1Ω low Rds(on) reduces conduction losses
• 132W maximum dissipation improves thermal headroom
• 53nC typical gate charge balances switching speed and drive effort
• Vgs 30V gate limit allows robust gate-drive ranges

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive inverters requiring high voltage
• Can be used for power factor correction circuits
• Suitable for utility and renewable-energy interface electronics

What temperature range can it reliably operate within?

The device is specified to function from -55°C up to 150°C, allowing use in demanding thermal environments.

What packaging and mounting considerations apply for thermal performance?

It is supplied in a PowerPAK 10x12 package intended for PCB mounting, which aids heat dissipation when paired with appropriate copper planes and thermal vias.

How does gate charge affect driver selection?

With a typical total gate charge of 53nC, drivers must supply sufficient current for desired switching speeds while managing gate-drive losses.

What is the maximum allowable gate-source voltage?

The maximum Vgs is 30V, so gate-drive circuits should be designed to stay within that limit to avoid device stress.