Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

RS Stock No.:: 268-8308
Mfr. Part No.:: SIHK105N60EF-T1GE3
Manufacturer:: Vishay

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

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Subtotal (1 reel of 2000 units)*

TWD245,800.00

(exc. GST)

TWD258,080.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

Plus 2,000 unit(s) shipping from June 15, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2000 +	TWD122.90	TWD245,800.00

*price indicative

RS Stock No.:: 268-8308
Mfr. Part No.:: SIHK105N60EF-T1GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.105Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	142W
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.105Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 142W
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK105N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHK105N60EF-T1GE3

This MOSFET is a high-voltage N-channel semiconductor switch designed for power conversion and switching duties in industrial electronics. It operates across a wide temperature range and mounts to printed circuit boards in an 8‑pin package, delivering a balance of switching capability and thermal handling suitable for demanding electrical control environments.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 24A continuous drain current supports substantial load currents • 0.105Ω Rds(on) reduces conduction losses during operation • 51nC gate charge allows controlled switching performance • 142W power dissipation assists in high-power handling on PCB • ±30V gate tolerance permits broad gate-drive margin

Applications

• Suitable for industrial motor-drive inverter stages • Ideal for high-voltage power supplies and converters • Used for DC-DC conversion in automation systems • Can be used for switch-mode power controllers in machinery • Suitable for power switching in electrical distribution units

What thermal extremes can this device tolerate during operation?

It is rated to function from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.

How many pins and what mounting style does it require on a board?

It is provided in an 8‑pin configuration intended for PCB mounting in a PowerPAK 10x12 footprint.

What kind of gate-drive constraints should be observed?

The device accepts up to 30V between gate and source, so gate-drive circuitry should remain within that limit to avoid damage.

How does the device meet environmental material restrictions?

It conforms to RoHS requirements, indicating restricted hazardous substance compliance.