ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) RD3G04BBJHRBTL
- RS Stock No.:
- 687-383
- Mfr. Part No.:
- RD3G04BBJHRBTL
- Manufacturer:
- ROHM
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Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
TWD59.00
(exc. GST)
TWD61.96
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 98 unit(s) shipping from August 24, 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD29.50 | TWD59.00 |
| 20 - 48 | TWD26.50 | TWD53.00 |
| 50 - 198 | TWD24.00 | TWD48.00 |
| 200 - 998 | TWD23.50 | TWD47.00 |
| 1000 + | TWD23.00 | TWD46.00 |
*price indicative
- RS Stock No.:
- 687-383
- Mfr. Part No.:
- RD3G04BBJHRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | RD3G04BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24.0mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27.6nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 6.8mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series RD3G04BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24.0mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27.6nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 6.8mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET delivers exceptional performance, designed specifically for high-efficiency applications. This component effectively manages power with a maximum Drain-Source voltage of -40V and continuous current handling of ±40A, making it ideal for managing electrical loads in various systems. Its low on-resistance of 24.0mΩ ensures minimal energy loss, promoting efficiency, while robust thermal characteristics allow it to operate reliably up to 175°C junction temperature. This product is not only AEC-Q101 qualified but also 100% avalanche tested, ensuring dependable functionality in critical environments. It is the perfect choice for applications in automotive systems, lighting, and industrial controls.
Low on resistance design for reduced energy loss
Outstanding thermal resistance enhances reliability in high-temperature environments
AEC Q101 qualification ensures quality and performance in automotive applications
100% avalanche testing reinforces component reliability under extreme conditions
Embossed packaging facilitates easy handling and integration into systems
Compatible with a variety of applications, including ADAS and lighting
High pulsed drain current capability of ±80A supports demanding load scenarios
Minimal gate charge enhances switching speed, improving overall efficiency
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