ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, 80 A, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL
- RS Stock No.:
- 687-362
- Mfr. Part No.:
- RD3E08BBJHRBTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
TWD120.00
(exc. GST)
TWD126.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 84 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD60.00 | TWD120.00 |
| 20 - 48 | TWD52.50 | TWD105.00 |
| 50 - 198 | TWD47.50 | TWD95.00 |
| 200 - 998 | TWD38.00 | TWD76.00 |
| 1000 + | TWD37.50 | TWD75.00 |
*price indicative
- RS Stock No.:
- 687-362
- Mfr. Part No.:
- RD3E08BBJHRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | RD3E08BBJHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series RD3E08BBJHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Length 10.5mm | ||
Width 6.8mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.
Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss
Pulsed drain current capability of ±160A, accommodating high-demand applications
Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control
Assemblable in a DPAK package for efficient thermal management and compact footprint
Avalanche tested for improved reliability in high-stress electrical environments
AEC Q101 qualified, making it ideal for safety-critical automotive applications.
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