ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 48 A, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL
- RS Stock No.:
- 687-468
- Mfr. Part No.:
- RD3L04BBJHRBTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
TWD71.00
(exc. GST)
TWD74.56
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 100 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD35.50 | TWD71.00 |
| 20 - 48 | TWD31.50 | TWD63.00 |
| 50 - 198 | TWD28.50 | TWD57.00 |
| 200 - 998 | TWD22.50 | TWD45.00 |
| 1000 + | TWD22.00 | TWD44.00 |
*price indicative
- RS Stock No.:
- 687-468
- Mfr. Part No.:
- RD3L04BBJHRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L04BBJHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Length | 10.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L04BBJHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.8mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Length 10.5mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for efficient switching in automotive and industrial applications. Capable of withstanding a drain-source voltage of -60V and maximum continuous drain current of ±48A, this component ensures reliable performance under demanding conditions. With a low on-resistance of 30mΩ, it optimises power loss, thereby increasing overall system efficiency. The product is also AEC-Q101 qualified and 100% avalanche tested, making it an ideal choice for critical applications where reliability is paramount.
Low on resistance promotes energy efficiency
AEC Q101 qualification ensures high reliability in automotive applications
100% avalanche testing provides assurance of performance under stress
Compatible with a wide temperature range from -55°C to 175°C for versatile usage
Avalanche energy capability of 34.9 mJ enhances robustness under dynamic conditions
Complete electrical characteristics at 25°C allow precise application in designs
Embossed packaging guarantees secure and efficient storage and handling
Optimised for various applications, including ADAS, infotainment, and lighting
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