ROHM RD3N045AT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N045ATTL1
- RS Stock No.:
- 687-488
- Mfr. Part No.:
- RD3N045ATTL1
- Manufacturer:
- ROHM
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TWD34.00
(exc. GST)
TWD35.70
(inc. GST)
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In Stock
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|---|---|---|
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| 1000 + | TWD13.50 | TWD27.00 |
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- RS Stock No.:
- 687-488
- Mfr. Part No.:
- RD3N045ATTL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | RD3N045AT | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 17W | |
| Typical Gate Charge Qg @ Vgs | 5.9nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 80V | ||
Series RD3N045AT | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 17W | ||
Typical Gate Charge Qg @ Vgs 5.9nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.8mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel MOSFET designed for a variety of power applications. With a drain-source voltage rating of -80V and a continuous drain current capability of -4.5A, this MOSFET provides excellent electrical performance for demanding environments. Its low on-resistance of 650mΩ maximises efficiency while minimising heat generation, contributing to superior overall reliability. RoHS compliant and featuring a robust TO-252 package, the RD3N045AT is ideal for motor drives and other switching applications, ensuring robust operation in high-power scenarios. The device is rigorously tested for gate reliability and features are also halogen-free, supporting environmentally friendly practices.
Low on resistance of 650mΩ enhances efficiency and reduces power losses
Provides high power handling capabilities with a maximum power dissipation of 17W
Rated for a maximum junction temperature of 150°C, ensuring reliability under strenuous conditions
Pulsed drain current capacity of ±9A supports transient load applications
Gate-source voltage tolerance of ±20V allows for flexible circuit designs
Ideal for motor drive applications, enhancing performance in electric motors
RoHS compliant construction promotes environmental sustainability
Tested for 100% Rg and UIS reliability, ensuring robust long-term performance
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