ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL
- RS Stock No.:
- 687-359
- Mfr. Part No.:
- AG501EGD3HRBTL
- Manufacturer:
- ROHM
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Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
TWD126.00
(exc. GST)
TWD132.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 100 unit(s) ready to ship from another location
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD63.00 | TWD126.00 |
| 20 - 48 | TWD55.50 | TWD111.00 |
| 50 - 198 | TWD49.50 | TWD99.00 |
| 200 - 998 | TWD40.00 | TWD80.00 |
| 1000 + | TWD39.00 | TWD78.00 |
*price indicative
- RS Stock No.:
- 687-359
- Mfr. Part No.:
- AG501EGD3HRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | AG501EGD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8mm | |
| Length | 10.5mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series AG501EGD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Operating Temperature 175°C | ||
Width 6.8mm | ||
Length 10.5mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.
Offers low on resistance for reduced power loss and enhanced efficiency
AEC Q101 qualified, ensuring reliability for automotive and critical applications
Avalanche tested to guarantee performance under dynamic conditions
Supports a maximum power dissipation of 142W, compatible with high-performance designs
Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments
Pb free plating and RoHS compliant, meeting modern environmental standards
Optimised packaging specifications, including embedding options for automated assembly
Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events
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