Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement, 3-Pin TO-252 IRFR4620TRLPBF

RS Stock No.:: 915-5023
Mfr. Part No.:: IRFR4620TRLPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement, 3-Pin TO-252 IRFR4620TRLPBF

The image is for reference only, please refer to product details and specifications

Subtotal (10 units, in packs of 10)*

TWD495.00

(exc. GST)

TWD519.80

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

60 unit(s) ready to ship from another location
Plus 510 unit(s) shipping from October 09, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 +	TWD49.50	TWD495.00

*price indicative

RS Stock No.:: 915-5023
Mfr. Part No.:: IRFR4620TRLPBF
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	78mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	144W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	7.49mm
	Height	2.39mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 78mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 144W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 7.49mm
	Height 2.39mm
	Length 6.73mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - IRFR4620TRLPBF

This n-channel enhancement-mode MOSFET is a surface-mount power transistor designed for switching and power-conversion roles in electronic systems. It operates across a wide temperature span, making it suitable for demanding thermal environments, and provides high-voltage switching capability for applications requiring robust drain-source performance.

Features and Benefits:

• 200V rating enables high-voltage switching capability
• 24A continuous drain current supports substantial load currents
• 78mΩ Rds(on) delivers low conduction losses
• 25nC typical gate charge allows fast gate switching
• 144W maximum power dissipation handles significant thermal load

Applications

• Suitable for high-voltage DC-DC converters in power supplies
• Ideal for motor-drive switching stages in industrial systems
• Used with battery-management circuits requiring 200V tolerance
• Can be used for synchronous rectification in power modules

What gate-drive considerations are required for rapid switching?

Use a driver capable of sourcing and sinking currents to charge the gate within the typical 25nC total gate charge budget to balance switching speed and minimised transition losses.

How does thermal management affect continuous operation at high currents?

To sustain the 24A continuous current and up to 144W dissipation, ensure adequate PCB copper area or heat-sinking and maintain junction temperatures within the specified operating range.

What are the limits for gate and drain voltages to avoid damage?

Keep gate-to-source voltage within ±20V and ensure drain-to-source never exceeds the 200V maximum rating under all operating conditions.

How does the device behave in cold and hot environments?

It is specified to function from -55°C up to 175°C, so design margins should account for parameter shifts such as on-resistance variation over that temperature span.