Infineon HEXFET N-Channel MOSFET, 5 A, 200 V Enhancement, 3-Pin TO-252 IRFR220NTRLPBF

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Subtotal (1 pack of 25 units)*

TWD937.50

(exc. GST)

TWD984.50

(inc. GST)

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Units
Per unit
Per Pack*
25 - 725TWD37.50TWD937.50
750 - 1475TWD36.60TWD915.00
1500 +TWD36.00TWD900.00

*price indicative

Packaging Options:
RS Stock No.:
217-2617
Distrelec Article No.:
304-39-419
Mfr. Part No.:
IRFR220NTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

2.39mm

Length

6.73mm

Height

10.41mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

Capable of being wave-soldered

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