Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V Enhancement, 3-Pin TO-252 IRFR220NTRLPBF
- RS Stock No.:
- 217-2617
- Distrelec Article No.:
- 304-39-419
- Mfr. Part No.:
- IRFR220NTRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD707.50
(exc. GST)
TWD743.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 16,750 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD28.30 | TWD707.50 |
| 750 - 1475 | TWD27.60 | TWD690.00 |
| 1500 + | TWD27.20 | TWD680.00 |
*price indicative
- RS Stock No.:
- 217-2617
- Distrelec Article No.:
- 304-39-419
- Mfr. Part No.:
- IRFR220NTRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 10.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
Capable of being wave-soldered
Related links
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