Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement, 3-Pin TO-252 IRFR4620TRLPBF
- RS Stock No.:
- 165-8030
- Mfr. Part No.:
- IRFR4620TRLPBF
- Manufacturer:
- Infineon
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TWD97,500.00
(exc. GST)
TWD102,360.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | TWD32.50 | TWD97,500.00 |
| 15000 + | TWD31.20 | TWD93,600.00 |
*price indicative
- RS Stock No.:
- 165-8030
- Mfr. Part No.:
- IRFR4620TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 78mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 144W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 7.49mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 78mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 144W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 7.49mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - IRFR4620TRLPBF
This n-channel enhancement-mode MOSFET is a surface-mount power transistor designed for switching and power-conversion roles in electronic systems. It operates across a wide temperature span, making it suitable for demanding thermal environments, and provides high-voltage switching capability for applications requiring robust drain-source performance.
Features and Benefits:
• 200V rating enables high-voltage switching capability
• 24A continuous drain current supports substantial load currents
• 78mΩ Rds(on) delivers low conduction losses
• 25nC typical gate charge allows fast gate switching
• 144W maximum power dissipation handles significant thermal load
• 24A continuous drain current supports substantial load currents
• 78mΩ Rds(on) delivers low conduction losses
• 25nC typical gate charge allows fast gate switching
• 144W maximum power dissipation handles significant thermal load
Applications
• Suitable for high-voltage DC-DC converters in power supplies
• Ideal for motor-drive switching stages in industrial systems
• Used with battery-management circuits requiring 200V tolerance
• Can be used for synchronous rectification in power modules
• Ideal for motor-drive switching stages in industrial systems
• Used with battery-management circuits requiring 200V tolerance
• Can be used for synchronous rectification in power modules
What gate-drive considerations are required for rapid switching?
Use a driver capable of sourcing and sinking currents to charge the gate within the typical 25nC total gate charge budget to balance switching speed and minimised transition losses.
How does thermal management affect continuous operation at high currents?
To sustain the 24A continuous current and up to 144W dissipation, ensure adequate PCB copper area or heat-sinking and maintain junction temperatures within the specified operating range.
What are the limits for gate and drain voltages to avoid damage?
Keep gate-to-source voltage within ±20V and ensure drain-to-source never exceeds the 200V maximum rating under all operating conditions.
How does the device behave in cold and hot environments?
It is specified to function from -55°C up to 175°C, so design margins should account for parameter shifts such as on-resistance variation over that temperature span.
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