Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement TO-263 IRFS4620TRLPBF
- RS Stock No.:
- 257-9436
- Mfr. Part No.:
- IRFS4620TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD485.00
(exc. GST)
TWD509.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 330 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD97.00 | TWD485.00 |
| 25 - 45 | TWD86.80 | TWD434.00 |
| 50 - 95 | TWD85.40 | TWD427.00 |
| 100 - 245 | TWD69.60 | TWD348.00 |
| 250 + | TWD68.20 | TWD341.00 |
*price indicative
- RS Stock No.:
- 257-9436
- Mfr. Part No.:
- IRFS4620TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 77.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 144W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 77.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 144W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 24A Maximum Continuous Drain Current - IRFS4620TRLPBF
This MOSFET is an N-channel enhancement-mode power transistor designed for high-voltage switching and power-conversion tasks. It is supplied in a TO-263 package suited to board-mounted power assemblies and operates across an extended temperature span for demanding environments. The device incorporates an intrinsic body diode with a specified forward voltage and is RoHS-compliant.
Features and Benefits:
• 200V rating enables high-voltage switching applications
• 24A continuous current supports substantial load handling
• 77.5mΩ RDS(on) reduces conduction losses during operation
• 144W power dissipation allows elevated thermal loading
• 25 nC typical gate charge yields predictable drive requirements
• 24A continuous current supports substantial load handling
• 77.5mΩ RDS(on) reduces conduction losses during operation
• 144W power dissipation allows elevated thermal loading
• 25 nC typical gate charge yields predictable drive requirements
Applications
• Suitable for high-voltage DC-DC converter stages
• Ideal for switch-mode power-supply output switches
• Used with motor-drive controllers in power assemblies
• Can be used for load-switching in industrial electronics
• Appropriate for power management in non-automotive systems
• Ideal for switch-mode power-supply output switches
• Used with motor-drive controllers in power assemblies
• Can be used for load-switching in industrial electronics
• Appropriate for power management in non-automotive systems
What gate-drive considerations should I plan for?
Expect a typical total gate charge of 25 nC at VGS
choose a driver that can source and sink sufficient current to achieve the desired switching speed.
How does thermal capability affect PCB design?
With a maximum power dissipation of 144W, ensure adequate copper area or heatsinking and thermal vias to manage junction-to-ambient heat transfer.
What are the limits for control and signal voltages?
The gate may be driven up to 20V relative to source
gate-source excursions should not exceed this value.
What temperature range can it tolerate in operation?
The device is specified to operate from -55°C up to 175°C for wide-temperature applications.
What diode characteristic matters for reverse conduction?
The intrinsic diode presents a forward voltage of 1.3V which influences conduction losses during reverse-current events.
Related links
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement TO-263 IRFS4620TRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR4620TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon BSC500N20NS3 G N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON BSC500N20NS3GATMA1
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFI1310NPBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF8788TRPBF
- Infineon AUIRFS N-Channel MOSFET 200 V, 3-Pin TO-252 AUIRFR4620TRL
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin DPAK IRFR24N15DPBF