Toshiba TK Type N-Channel MOSFET, 9.7 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 891-2863
- Mfr. Part No.:
- TK10A60W5,S5VX(M
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD300.00
(exc. GST)
TWD315.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 5 unit(s) shipping from August 31, 2026
- Plus 85 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | TWD60.00 | TWD300.00 |
| 15 - 20 | TWD58.80 | TWD294.00 |
| 25 + | TWD57.80 | TWD289.00 |
*price indicative
- RS Stock No.:
- 891-2863
- Mfr. Part No.:
- TK10A60W5,S5VX(M
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5mm | |
| Standards/Approvals | No | |
| Height | 15mm | |
| Length | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Width 4.5mm | ||
Standards/Approvals No | ||
Height 15mm | ||
Length 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET Transistors, Toshiba
Related links
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