Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

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Subtotal (1 pack of 5 units)*

TWD205.00

(exc. GST)

TWD215.25

(inc. GST)

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Per Pack*
5 - 20TWD41.00TWD205.00
25 - 120TWD40.20TWD201.00
125 - 245TWD39.00TWD195.00
250 - 495TWD38.00TWD190.00
500 +TWD37.00TWD185.00

*price indicative

RS Stock No.:
896-2640
Mfr. Part No.:
TK10P60W,RVQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

430 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

7.18mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

2.3mm

COO (Country of Origin):
CN


MOSFET Transistors, Toshiba

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