Toshiba TK Type N-Channel MOSFET, 5.4 A, 600 V Enhancement, 3-Pin TO-220 TK5A60W,S4VX(M
- RS Stock No.:
- 896-2404
- Mfr. Part No.:
- TK5A60W,S4VX(M
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD160.00
(exc. GST)
TWD168.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 255 unit(s) shipping from February 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD32.00 | TWD160.00 |
| 25 - 120 | TWD31.00 | TWD155.00 |
| 125 - 245 | TWD30.00 | TWD150.00 |
| 250 - 495 | TWD29.40 | TWD147.00 |
| 500 + | TWD28.80 | TWD144.00 |
*price indicative
- RS Stock No.:
- 896-2404
- Mfr. Part No.:
- TK5A60W,S4VX(M
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Height | 15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Length 10mm | ||
Height 15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementRVQ(S
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS5VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS5VX(M
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220