Toshiba TK Type N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-220 TK11A65W,S5X(M
- RS Stock No.:
- 891-2875
- Mfr. Part No.:
- TK11A65W,S5X(M
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD198.00
(exc. GST)
TWD207.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 155 unit(s) shipping from February 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD39.60 | TWD198.00 |
| 25 - 120 | TWD38.80 | TWD194.00 |
| 125 - 245 | TWD37.40 | TWD187.00 |
| 250 - 495 | TWD36.80 | TWD184.00 |
| 500 + | TWD36.20 | TWD181.00 |
*price indicative
- RS Stock No.:
- 891-2875
- Mfr. Part No.:
- TK11A65W,S5X(M
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Height | 15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 10mm | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Height 15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementRQ(S
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS5VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS5VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba TK Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247