Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

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Bulk discount available

Subtotal (1 pack of 20 units)*

TWD428.00

(exc. GST)

TWD449.40

(inc. GST)

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Last RS stock
  • Final 160 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
20 - 740TWD21.40TWD428.00
760 - 1480TWD20.90TWD418.00
1500 +TWD20.60TWD412.00

*price indicative

Packaging Options:
RS Stock No.:
814-1323
Mfr. Part No.:
SISS27DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

92nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Length

3.3mm

Height

0.78mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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