Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

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RS Stock No.:
165-6922
Mfr. Part No.:
SISS23DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

195nC

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

-8V, +8V

Forward Voltage Vf

-0.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.3mm

Height

780μm

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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