Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3

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Subtotal (1 pack of 20 units)*

TWD688.00

(exc. GST)

TWD722.40

(inc. GST)

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Units
Per unit
Per Pack*
20 - 740TWD34.40TWD688.00
760 - 1480TWD33.60TWD672.00
1500 +TWD33.10TWD662.00

*price indicative

Packaging Options:
RS Stock No.:
814-1314
Mfr. Part No.:
SISS23DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

195nC

Forward Voltage Vf

-0.8V

Maximum Gate Source Voltage Vgs

-8V, +8V

Maximum Operating Temperature

150°C

Width

3.3mm

Standards/Approvals

No

Height

780μm

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN

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