Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3
- RS Stock No.:
- 180-7307
- Mfr. Part No.:
- SI7119DN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD53,400.00
(exc. GST)
TWD56,070.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 6,000 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD17.80 | TWD53,400.00 |
| 6000 + | TWD17.20 | TWD51,600.00 |
*price indicative
- RS Stock No.:
- 180-7307
- Mfr. Part No.:
- SI7119DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PowerPAK 1212-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | 50°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PowerPAK 1212-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature 50°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.07mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 1050mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 3.8A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Low thermal resistance powerpak package with small size and low 1.07 mm profile
• Maximum dissipation power 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
Related links
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