Vishay TrenchFET N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

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Subtotal (1 pack of 10 units)*

TWD362.00

(exc. GST)

TWD380.10

(inc. GST)

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Units
Per unit
Per Pack*
10 - 740TWD36.20TWD362.00
750 +TWD35.30TWD353.00

*price indicative

Packaging Options:
RS Stock No.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

39W

Maximum Gate Source Voltage Vgs

-16V, +20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

800mV

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

3.4mm

Width

3.4mm

Automotive Standard

No

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