Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 3000 units)*

TWD50,100.00

(exc. GST)

TWD52,620.00

(inc. GST)

Add to Basket
Select or type quantity
Orders below TWD1,300.00 (exc. GST) cost TWD500.00.
Temporarily out of stock
  • Shipping from June 11, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 3000TWD16.70TWD50,100.00
6000 +TWD16.20TWD48,600.00

*price indicative

RS Stock No.:
165-2807
Mfr. Part No.:
SISA04DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.73V

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Length

3.15mm

Standards/Approvals

No

Width

3.15 mm

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links