Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

TWD66,000.00

(exc. GST)

TWD69,300.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000TWD22.00TWD66,000.00
6000 +TWD21.30TWD63,900.00

*price indicative

RS Stock No.:
165-2807
Mfr. Part No.:
SISA04DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

730mV

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

-16V, +20V

Maximum Operating Temperature

150°C

Width

3.15mm

Standards/Approvals

No

Length

3.15mm

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

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